1998. 5. 8 1/2 semiconductor technical data Z5W27V zener diode silicon diffused-junction type revision no : 0 best suited for overvoltage protection of electronic system : electronic system for use in automobiles electronic system for commercial use electronic system for industrial use for communications, controls, measuring instruments, etc. features excellent clamp voltage characteristics that protect electronic system from any kind of surge. high surge power withstanding capabilities that absorb load dump surge. excellent surge responsibility for steep surge absorption. surface mount type is available for easy applications. zxial lead type is also available. although the typical zener voltage is v z =27v, we can provide the products other than the typical values. corresponds to taping packages. (500p/reel) maximum rating (ta=25 1 ) dim millimeters do-218 a b c d e 10.0 0.5 8.5 0.5 13.5 0.3 15.5 0.5 f 5.0 0.3 g h i j k l 9.0 0.3 2.0 0.5 3.0 0.5 2.5 0.5 3.3 0.5 7.6 0.5 10.0 0.3 c b a d e gh i f j k l anode + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit zener voltage v z i z =10ma 24.0 27 30.0 v operating resistance r d i z =10ma - - 30 u temperature coefficient t i z =10ma - 23 36 mv/ 1 forward voltage v f i f =6a - - 1.2 v reverse current i r v r =22v - - 10 a characteristic symbol rating unit allowable power dissipation (note 1) p 5 w non-repetitive peak reverse surge current (see fig.1 for the exponents.) i rsm 62 a junction temperature t j -40 150 1 storage temperature range t stg -40 150 1 note 1 : lead tip temperature t l =25 1 . 2 i rsm rsm i 010ms
1998. 5. 8 2/2 Z5W27V revision no : 0 10 zener current i (ma) z 29 28 27 26 zener voltage v (v) z z z i - v p - t , ta l lead temperature t , ambient temperature ta ( c) 0 50 100 150 0 allowable power dissipation p (w) l 1 2 3 4 5 6 t -p l ta-p size glass/epoxy substrate solder round a substrate size b thickness c 10mm 50mm 1.5mm a b c t l 30 31 32 1 10 2 10 3 10 4 10 5 (1a) typical ta=25 c surge absorption capability p (w) pulse width t (ms) 10 1 10 2 10 3 0.1 1 w 10 100 rsm 10 4 10 5 p - t rsm w ta=25 c peak value design recommended region t w p rectangular pulse transient thermal resistance r ( c/w) time t (s) 0.01 0.1 1.0 1m 10m 100m 1 10 100 1000 th 10 100 r - t th r th(j-a) r th(j-d) th(j-d) r :transient thermal resistance between junction and anode electrode. 10 forward current i (a) 0 0.1 1 f forward voltage v (v) i - v f f 0.4 0.6 0.8 1.0 1.2 1.4 100 typical ta=25 c f
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